| PART |
Description |
Maker |
| ATF-13736 ATF-13736-STR ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AA028N1-00 |
240 GHz GaAs MMIC Low Noise Amplifier
GT 14C 10#12 4#16 PIN PLUG
24-30 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| TMT-4-0503 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-13-6015 TLT-13-6014 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-13-6013 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-18-2002 |
Low Noise Amplifier 2 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-18-6006 TLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-8-2015 TLA-8-2014 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| CLA-18-6004 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
